excelics eia/EIB1718-2P preliminary data sheet 17.7-18.7ghz, 2w internally matched power fet 17.7-18.7ghz b andwidth and input/output impedance matched to 50 ohm eia features high pae( 25% typical) eib features high ip3(46dbm typical) +33.0/+32.5dbm typical p 1db output power for eia/eib 6.0/5.0db typical g 1db power gain for eia/eib non-hermetic metal flange package electrical characteristics (t a = 25 o c) eia1718-2p EIB1718-2P symbols parameters/test conditions min typ max min typ max unit p 1db output power at 1db compression f=17.7-18.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 32.0 33.0 32.0 32.5 dbm g 1db gain at 1db compression f=17.7-18.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 5.5 6.0 4.5 5.0 db pae power added efficiency at 1db compression f=17.7-18.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 25 20 % id 1db drain current at 1db compression 880 850 ma ip 3 output 3 rd order intercept point f=17.7-18.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 40 46* dbm i dss saturated drain current vds=3v, vgs=0v 1100 1440 1700 1100 1360 1700 ma g m transconductance vds=3v, vgs=0v 1500 700 ms v p pinch-off voltage vds=3v, ids=12ma -1.0 -2.5 -2.0 -3.5 v bv gd drain breakdown voltage igd=4.8ma -13 -15 -15 v r th thermal resistance (au-sn eutectic attach) 8 8 o c/w *typical C45dbc im3 at pout=23dbm/tone maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -8v -3v ids drain current idss idss igsf forward gate current 180ma 30ma pin input power 32dbm @ 3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation 17w 14.2w note: 1. exceeding any of the above r atings may result in permanent damage. 2. exceeding any of the above r atings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com
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